 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC3052 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR Dim A Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A L 1.BASE 2.EMITTER 3 B C BS 2 FEATURES n Top View 1 D G H J K L S V Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) V G n n C D H K J All Dimension in mm MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 50 50 6 0.2 150 o Units V V V A mW o 125, -55~125 C ELECTRICAL CH ARACTERIST ICS (Tam b = 25 oC unless otherwise sp ecified ) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) Test conditions Ic=100 A, IE=0 Ic= 100A, IB=0 IE= 100 A, IC=0 VCB= 50 V , IE=0 VEB= 6V , IC=0 VCE= 6V, IC= 1mA VCE= 6V, IC= 0.1mA I C = 100mA, IB = 10mA I C = 100mA, IB = 10mA VCE=6V , IC= 10mA VCE=6V, IE = 0, f = 1 MHz V CE=6V, IE = -0.1mA, f = 1KHz RG=2K 180 4 15 150 50 0.3 1 V V MHz pF dB MIN 50 50 6 0.1 0.1 800 TYP MAX UNIT V V V A A VCE(sat) VBE(sat) fT Cob NF CLASSIFICATION OF hFE Marking Rank Range http://www.SeCoSGmbH.com LE E 150-300 LF F 250-500 LG G 400-800 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SC3052 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor TYPICAL CHARACTERISTICS (TA = 25 o C) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SC3052 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
Price & Availability of 2SC3052
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |